AW-901e Plasma Etch System Key Features:.

• PROCESS AND PRODUCTION PROVEN reactor chamber assembly with upper and lower electrode.
• Handles  75mm,100mm, 125mm, 150mm Silicon or III-V wafers ,round.
• Robotic 3-axis wafer transfer TO PREVENT WAFER BREAKAGE.
• 4 independent gas line with 4 MFCs (Customized)
• Processing of substrate directly on cooled wafer chuck
• 13.56MHz fully automated RF matching network
• ENI ACG-10B 13.56MHz or Equivalent (Water Cooled).  Air-Cooled RF Generators are optional.
• Accurate, closed-loop pressure control with UPC and MKS Baratron capacitance manometer
• Touch screen monitor or LCD Monitor with PC.

New AW-901e Control System from Allwin21 Corp.

• Gas flows: settings for up to 4 independent mass flow controller values
• RF power: 50 to 1000 watts
• Process pressure
• Absolute endpoint time
• Timed cycles up to 4 hour each
• Wafer pins up/down
• Optical Endpoint Parameters
• Automated calibration of all subsystems
• Trouble shooting to subassembly levels
• Programmed comprehensive calibration and Built-in diagnostic functions
• Recipe creation for full automatic wafer processing
• Automatic decline of improper recipes and process data
• Multi level pass word protections
• Storage of multiple recipes and system functions
• Real-Time process data acquisition, display ,analysis
• Real-Time graphics display
• Process Data and Recipe storage on a hard drive

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